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 CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 1/4
BTB1132M3
Features
* Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB =- 0.5A /- 50mA * Complementary to BTD1664M3
Symbol
BTB1132M3
Outline
SOT-89
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -40 -32 -5 -1 -2.5 0.6 2 150 -55~+150 Unit V V V A A W C C
*1 *2
Note : *1 Single pulse, Pw=10ms *2 When mounted on a 40 x 40 x 0.7mm ceramic board.
BTB1132M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 Typ. -0.15 150 20 Max. -0.5 -0.5 -0.5 390 30 Unit V V V A A V MHz pF
Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 2/4
Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 IC=-500mA, IB=-50mA VCE=-3V, IC=-0.1A VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 380us, Duty Cycle2%
Classification of hFE
Rank Range P 82~180 Q 120~270 R 180~390
BTB1132M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---(mV)
HFE@VCE=3V
Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Current Gain---HFE
100
100
10
10 0.1 1 10 100 1000 Collector Current---IC(mA) 10000
1 0.1 1 10 100 1000 10000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000 Power Dissipation---PD(W) Saturation Voltage---(mV)
VBESAT@IC=10IB 2.5 2 1.5 1 0.5 0
Power Derating Curves
See n ote 2 on page 1
1000
100 0.1 1 10 100 1000 10000 Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA()
BTB1132M3
CYStek Product Specification
CYStech Electronics Corp.
SOT-89 Dimension
A
Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 4/4
Marking:
1
2
C
3
H
BK*
B
D
Style: Pin 1. Base 2. Collector 3. Emitter
E F G
I
3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3
*: Typical
DIM A B C D E
Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201
Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51
DIM F G H I
Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161
Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1132M3
CYStek Product Specification


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